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IEC 62047-9-2011
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
适用范围：IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy.
发布日期： 2011-07-13
实施日期： 2011-07-13
发布单位： IX-IEC
ICS分类号： 31.080.99 - 电子学 - 其他半导体器件
标准组织： IEC - 国际电工委员会标准
全文来源： WF
英文关键词： Bonding Components Compounds Compression Connections Electrical engineering Electronic equipment and components Materials Measurement Measuring techniques Microelectronics Microsystem techniques Properties Semiconductor devices Strength of materials Surface treatment Symbols System engineering Testing Visual inspection (testing) Wafers
语种： 汉语
页数： 49
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