Detail specification for silicon NPN low frequency high power high reverse voltage transistors,Type 3DD101 and 3DD102 ...
实施日期:1976-06-01
Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG103 ...
实施日期:1974-10-01
Detail specification for N channel junction field-effect low power switching transistors,Type CS46 ...
实施日期:1982-12-01
Detail specification for silicon PNP low-frequency high power transistors,Type 3AD150 ...
实施日期:1981-10-01
Detail specification for N channel junction field-effect low power switching transistors,Type CS37 ...
实施日期:1982-12-01
Detail specification for N channel junction field-effect low power switching transistors,Type CS42 ...
实施日期:1982-12-01
Measurement of the electrical properties of microwave tubes. Part 3: Disk seal tubes
适用范围:Deals with the basic theory and measurements for disk seal tubes.
发布日期:1972-01-01 实施日期:1972-01-01
Detail specification for silicon PNP epitaxial planar low power switching transistors,Type 3CK110 ...
实施日期:1982-05-01
Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD262 and 3CD462 ...
实施日期:1984-03-01
Detail specification for silicon PNP epitaxial planar low frequency high power transistors,Type 3CD553,3CD554 and 3CD653 ...
实施日期:1984-03-01
Detail specification for silicon NPN epitaxial planar low-frequency high power transistors,Type 3DD62 and 3DD63 ...
实施日期:1974-10-01
Detail specification for silicon NPN low frequency high power high reverse voltage transistors,Type 3DD103 and 3DD104 ...
实施日期:1976-06-01
Detail specification for silicon NPN high-frequency high power transistors,Type 3DA106 ...
实施日期:1979-07-01
Detail specification for silicon NPN high-frequency high power transistors,Type 3DA39 ...
实施日期:1979-07-01
Detail specification for silicon NPN high-frequency high power transistors,Type 3DA102 ...
实施日期:1979-07-01
Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD167,3DD168 and 3DD169 ...
实施日期:1981-06-01
Measuring methods for semiconductor device--Reverse blocking triode thyristor
Detail specification for silicon PNP epitaxial planar low power switching transistors,Type 3CK111 ...
实施日期:1982-05-01
Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD162 and 3DD163 ...
实施日期:1981-06-01
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