Testing of materials for semiconductor technology; determination of etch rates of etching mixtures; silicium-dioxid coating; optical method
适用范围:The standard defines the test method for the determination of etch rates of etch mixtures on siliciumdioxid coatings.
Testing of materials for semiconductor technology; determination of impurities in carrier gases and doping gases; determination of water impurity in hydrogen, oxygen, nitrogen, argon and helium by usin...
适用范围:The standard determines a test method for the determination of water impurity in carrier gases and doping gases (H<(Index)>2, O<(Index)2>, N<(Index)2>, Ar, He) used in the semi conductor technology.
Testing of materials for semiconductor technology; determination of traces of elements in liquids; Part 2: Calcium(Ca), cobalt(Co), chromium(Cr), copper(Cu), iron(Fe), nickel(Ni) and zinc(Zn) in hydrof...
适用范围:The document specifies a method for testing hydrofluoric acid for the metal traces of cobalt (Co), chromium (Cr), copper (Cu), iron (Fe), and nickel (Ni) relevant to semiconductor technology. Emission ...
Testing of materials for semiconductor technology; determination of etch rates of etching mixtures; silicium monocrystals; gravimetric method
Testing of materials for semiconductor technology; determination of impurities in carrier gases and doping gases; determination of oxygen impurity in N<(Index)2>, Ar, He, Ne and H<(Index)2> by using a ...
适用范围:The standard should define the test method for determining the content of O<(Index)2> in the carrier and doping gases N<(Index)2>, Ar, He, Ne and H<(Index)2>.#,,#
Testing of materials for semiconductor technology; Determination of impurities in carrier gases and dopant gases - Part 9: Determination of oxygen, nitrogen, carbonmonxide, carbondioxide, hydrogen and ...
Testing of materials for semiconductor technology; determination of impurities in carrier gases and doping gases; determination of methane impurity in H<(Index)2>, O<(Index)2>, N<(Index)2>, Ar and He b...
Testing of materials for semiconductor technology; determination of traces of elements in liquids; Part 1: Silver(Ag), gold(Au), calcium(Ca), copper(Cu), iron(Fe), potassium(K) and soldium(Na) in nitri...
适用范围:The document specifies a method for testing nitric acid for the relevant metal traces of silver, gold, copper, iron, potassium and sodium in trace quantities, for which the method of atomic absorption ...
Nuclear power plants - Instrumentation and control important to safety - Hardware design requirements for computer-based systems
适用范围:This standard covers digital systems hardware for Class 1 and Class 2 systems as derived from the safety categories of the realized functions according to DIN IEC 61513 (VDE 0491-2). This also includes...
实施日期:2010-03-01
Standard Guide for Measuring Widths of Interfaces in Sputter Depth Profiling Using SIMS
适用范围:<p id="s00014">Although it would be desirable to measure the extent of profile distortion in any unknown sample by using a standard sample and this guide, measurements of interface width (profile disto...
实施日期:2006-11-01
Testing of materials for semiconductor technology - Method for the characterisation of moulding compounds for electronic components - Part 3: Determination of cationic impurities
适用范围:The document defines a method for the determination of Na, K and CA in moulding compounds for electronic components by analysis of an aqueous extract of the epoxy resin moulding compound by means of th...
Packaging of components for automatic handling -- Part 1: Tape packaging of components with axial leads on continuous tapes
适用范围:この規格は,電子機器用アキシャルリード線端子部品のテープによるペッもソグージングについて適用する。通常,部品のリード線端子をテープで固定する。この規格は,自動実装,リード線端子の加工,挿入などの操作を行う装置を用いるテーピングの要求事項について規定する。また,上記の目的のため.部品のテーピング...
Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 3: Calibration of optical particle counters
适用范围:The document describes methods for the determination of measuring deviations of particle sizes, particle concentrations and the resolving capacity of optical particle counters based upon measuring of t...
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