GB/T 6618-1995

硅片厚度和总厚度变化测试方法

Test method for thickness and total thickness variatio silicon slices

实施日期：1995-12-01

GB/T 6619-1995

硅片弯曲度测试方法

Test methods for bow of silicon slices

实施日期：1995-12-01

ISO 22197-5-2013

Fine ceram (advanced ceram,advanced technical ceram). Test method for air-purification performance of semiconducting photocatalytic materials. Part 5:Removal of methyl mercaptan

实施日期：2013-04-08

GB/T 19921-2005

硅抛光片表面颗粒测试方法

Test method of particles on silicon wafer surfaces

适用范围：本标准规定了应用扫描表面检查系统(SSIS)对硅抛光片表面颗粒进行测试、计数和报告的程序。　　本标准适用于硅抛光片，也可适用于硅外延片或其他镜面抛光片(如化合物抛光片)。　　本标准也可适用于观测硅抛光片表面的划痕、桔皮...

发布日期：2005-09-19  实施日期：2006-04-01

BS ISO 22197-5-2013

精细陶瓷(先进陶瓷、高技术陶瓷) 半导体光催化材料的空气净化性能的试验方法 钾硫醇的清除

Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for air-purification performance of semiconducting photocatalytic materials. Removal of methyl mercaptan

发布日期：2013-04-30  实施日期：2013-04-30

GB/T 6616-1995

半导体硅片电阻率及硅薄膜薄层电阻测定 非接触涡流法

Test method for measuring resistivity of semiconductozlicon or sheet resistance of seuiconductor films witnoncontact Eddy-Current Gage

实施日期：1995-12-01

GB/T 1552-1995

硅、锗单晶电阻率测定 直排四探针法

Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array

适用范围：本标准规定了用直排四探针测量硅、锗单晶电阻率的方法。　　本标准适用于测量试样厚度和从试样边缘与任一探针端点的最近距离二者均大于探针间距的4倍的硅、锗单晶的体电阻率以及测量直径大于探针间距的10倍、厚度小于探针间...

发布日期：1995-04-18  实施日期：1995-12-01

NF B44-101-5-2013

Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials - Part 5: removal of methyl mercaptan

GB/T 1554-1995

硅晶体完整性化学择优腐蚀检验方法

Test method for crystallographic perfection of silicon by preferential etch techniques

实施日期：1995-12-01

GB/T 19199-2003

半绝缘砷化镓单晶中碳浓度的红外吸收测试方法

Test method for carbon concentration of semi-insulating monocrystal gallium arsenide by measurement infrared absorption method

适用范围：本标准规定了非掺杂半绝缘砷化镓晶片中碳浓度的红外吸收测试方法。　　本标准适用于电阻率大于1.0×10^7Ω·cm的非掺杂半绝缘砷化镓晶片中碳浓度的测定。可测定的最低碳浓度为4.0×10^1^4 cm^-^3 。

发布日期：2003-06-16  实施日期：2004-01-01

BS ISO 22197-4-2013

精细陶瓷(先进陶瓷、高技术陶瓷) 半导体光催化材料的空气净化性能试验方法 甲醛的清除

Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for air-purification performance of semiconducting photocatalytic materials. Removal of formaldehyde

发布日期：2013-04-30  实施日期：2013-04-30

GB/T 16438-1996

半导体少长针消雷装置使用的安全要求

The safety demands of using semiconductor lightning eliminator

适用范围：本标准规定了半导体少长针消雷装置(以下简称消雷装置)的选用、安装、验收、维护和检测的安全要求。　　本标准适用于广播电视、邮电通信、石油、化工、建筑、军火炸药、国防工程、气象、地震和电力等诸多行业场所作直击雷保护的半导体...

发布日期：1996-06-17  实施日期：1997-07-01

DIN 50452-1-1995

半导体材料的检验.液体中粒子的分析方法.第1部分:显微镜测定粒子

Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 1: Microscopic determination of particles

适用范围：This method cover the determination of the concentration of particulate matter contamination from liquids isolated on a membrane filter by microscopic counting. The scope is limited to sizing particles...

ISO 22197-4-2013

Fine ceram (advanced ceram,advanced technical ceram). Test method for air-purification performance of semiconducting photocatalytic materials. Part 4:Removal of formaldehyde

实施日期：2013-04-08

GB/T 6624-1995

硅抛光片表面质量目测检验方法

Standard method for measuring the surface quality of polished silicon wafers by visual examination

实施日期：1995-12-01

GB/T 6619-2009

硅片弯曲度测试方法

Test methods for bow of silicon wafers

适用范围：本标准规定了硅单晶切割片、研磨片、抛光片弯曲度的接触式测量方法。本标准适用于测量直径不小于25mm,厚度为不小于180μm,直径和厚度比值不大于250的圆形硅片的弯曲度。本测试方法的目的是用于来料验收和过程控制。本标准也...

发布日期：2009-10-30  实施日期：2010-06-01

DIN 50450-4-1993

半导体技术的材料试验

Testing of materials for semiconductor technology; determination of impurities in carrier gases and dopant gases; determination of C<(Index)1>-C<(Index)3>-hydrocarbons in nitrogen by gas-chromatography...

适用范围：This document specifies a method for the determination of the volume part of C<(Index)1>-C<(Index)3>-hydrocarbons in nitrogen in the range between 0,2 and 10 ?l.#,,#

DIN 50450-2-1991

半导体技术的材料检验.载气体和掺杂气体中杂质的测定.用原电池测定氮,氩,氖和氢中的氧杂质

Testing of materials for semiconductor technology; determination of impurities in carrier gases and doping gases; determination of oxygen impurity in N<(Index)2>, Ar, He, Ne and H<(Index)2> by using a ...

适用范围：The standard should define the test method for determining the content of O<(Index)2> in the carrier and doping gases N<(Index)2>, Ar, He, Ne and H<(Index)2>.#,,#

GB/T 6621-2009

硅片表面平整度测试方法

Testing methods for surface flatness of silicon slices

适用范围：本标准规定了用电容位移传感器测定硅抛光片平整度的方法,切割片、研磨片、腐蚀片也可参照此方法。本标准适用于测量标准直径76mm,100mm,125mm,150mm,200mm,电阻率不大于200Ω•cm厚度不大于1000μm的硅抛光片的表面平整度和直...

发布日期：2009-10-30  实施日期：2010-06-01

GB/T 19922-2005

硅片局部平整度非接触式标准测试方法

Standard test methods for measuring site flatness on silicon wafers by noncontact scanning

适用范围：本标准规定了用电容位移传感法测定硅片表面局部平整度的方法。　　本标准适用于无接触、非破坏性地测量干燥、洁净的半导体硅片表面的局部平整度。适用于直径100mm及以上、厚度250μm及以上的腐蚀、抛光及外延硅片。

发布日期：2005-09-19  实施日期：2006-04-01