Detail specification for electronic components--PN silicon unijunction transistors,Type BT37 (Applicable for certification) ...
实施日期:1991-06-30
Semiconductor discrete devices--Detail specification for Type CS139 silicon P-channel MOS enhancement mode field-effect transistor
发布日期:1995-05-25 实施日期:1995-12-01
Semiconductor discrete devices. Detail specification for type 3DA505 silicon microwave pulse power transistor
发布日期:2002-10-30 实施日期:2003-03-01
Semiconductor discrete devices. Detail specification for type 3DA508 silicon microwave pulse power transistor
发布日期:2004-08-02 实施日期:2004-12-01
Semiconductor discrete devices--Detail specification for Type CS5114~CS5116 silicon P-channel deplition mode field-effect transistor
发布日期:1995-05-25 实施日期:1995-12-01
Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD871 ...
实施日期:1988-12-01
Detail specification for electronic components--Ambient-rated transistor for type 3DG2271 silicon NPN for high frequency amplification
实施日期:1997-01-01
Semiconductor discrete device--Detail specification for types CS4856~CS4861 silicon N-channel deplition mode field-effect transistor
发布日期:1994-09-30 实施日期:1994-12-01
Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD820 ...
实施日期:1988-12-01
Semiconductor discrete devices Detail specification for type CS3458~CS3460 silicon N-channel junction mode field-effect transistors
发布日期:1997-06-17 实施日期:1997-10-01
Detail specification for Type FH181A NPN silicon power Darlington transistor
发布日期:1993-05-11 实施日期:1993-07-01
Detail specification for silicon PNP low power transistors,Type 3DX673 ...
实施日期:1986-10-01
Semiconductor discrete devices--Detail specification for Type CS140 silicon N-channel MOS deplition mode field-effect transistor
发布日期:1995-05-25 实施日期:1995-12-01
Semiconductor discrete devices. Detail specification for type 3DA506 silicon microwave pulse power transistor
发布日期:2002-10-30 实施日期:2003-03-01
Semiconductor discrete devices--Detail specification for Type CS4091~CS4093 silicon N-channel deplition mode field-effect transistor
发布日期:1995-05-25 实施日期:1995-12-01
Semiconductor discrete devices--Detail specification for Type CS6760 and CS6762 silicon N-channel enhacement mode field-effect transistor
发布日期:1995-05-25 实施日期:1995-12-01
Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD205A
实施日期:1997-01-01
Detail specification for electronic components--Silicon NPN case rated bipolar transistor for high-frequency amplification, Type 3DA1722
实施日期:1991-06-30
Detail specification for silicon NPN high frequency low noise low power transistors,Type 3DG388 ...
实施日期:1986-10-01
Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD1942 ...
实施日期:1988-12-01
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