SJ/T 10972-1996

电子元器件详细规范 3DD 207型硅NPN管壳额定低频放大晶体管(可供认证用)

Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD207 ...

实施日期：1997-01-01

SJ/T 10051-1991

电子元器件详细规范 ３ＤＡ２６８８型ＮＰＮ高频放大管壳额定的双极型晶体管

Detail specification for electronic components--Silicon NPN case rated bipolar transistor for high-frequency amplification for type 3DA2688

实施日期：1991-06-30

SJ/T 10974-1996

电子元器件详细规范 3DD325型硅NPN 环境额定低频放大晶体管(可供认证用)

实施日期：1997-01-01

SJ 20013-1992

半导体分立器件 ＧＰ、ＧＴ和ＧＣＴ级 ＣＳ１０型硅Ｎ沟道耗尽型场效应晶体管详细规范

Semiconductor discrete device--Detail specification for silicon N-channel deplition mode field-effect transistor of Type CS10 GP,GT and GCT classes

发布日期：1992-02-01  实施日期：1992-05-01

SJ 50033/85-1995

半导体分立器件ＣＳ１４１型硅Ｎ沟道ＭＯＳ耗尽型场效应晶体管详细规范

Semiconductor discrete devices--Detail specification for Type CS141 silicon N-channel MOS deplition mode field-effect transistor

发布日期：1995-05-25  实施日期：1995-12-01

SJ/T 11058-1996

电子元器件详细规范 4CS1421型硅高频双绝缘栅场效应晶体管(可供认证用)

Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS1421 ...

实施日期：1997-01-01

SJ/T 11055-1996

电子元器件详细规范 4CS119型硅高频双绝缘栅场效应晶体管(可供认证用)

Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS119 ...

实施日期：1997-01-01

SJ/T 10956-1996

电子元器件详细规范 4CS122型硅高频双绝缘栅场效应晶体管(可供认证用)

Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS122 ...

实施日期：1997-01-01

SJ 20173-1992

半导体分立器件 ３ＤＫ２２１８（２２１８Ａ、２２１９、２２１９Ａ）型ＮＰＮ硅小功率开关晶体管详细规范

Semiconductor discrete device--Detail specification for NPN silicon low-power switching transistor of Types 3DK2218,3DK2218A, 3DK2219 and 3DK2219A

发布日期：1992-11-19  实施日期：1993-05-01

SJ/T 11057-1996

电子元器件详细规范 4CS142型硅高频双绝缘栅场效应晶体管(可供认证用)

Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS142 ...

实施日期：1997-01-01

SJ 50033/155-2002

半导体分立器件 3DG252型硅微波线性晶体管详细规范

Semiconductor discrete devices. Detail specification for type 3DG252 sillcon microwave linearity transistor

发布日期：2002-10-30  实施日期：2003-03-01

SJ/T 10049-1991

电子元器件详细规范 ３ＤＡ１１６２型硅ＮＰＮ高频放大管壳额定的双极型晶体管

Detail specification for electronic components--Silicon NPN case-rated bipolar transistor for high-frequency amplification,Type 3DA1162

实施日期：1991-06-30

SJ/T 10969-1996

电子元器件详细规范 3DG2636型硅NPN环境额定高频放大晶体管(可供认证用)

Detail specification for electronic components high-frequency amplification transistor for silicon NPN ambient-rated for type 3DG 2636

实施日期：1997-01-01

SJ 50033/34-1994

半导体分立器件 Ｆ１１２９型ＮＰＮ硅功率达林顿晶体管详细规范

Semiconductor discrete device--Detail specification for type FH129 NPN silicon power Darlington transistor

发布日期：1994-09-30  实施日期：1994-12-01

SJ 20056-1992

半导体分立器件 ３ＤＫ１０３型ＮＰＮ硅小功率开关晶体管详细规范

Semiconductor discrete device--Detail specification for silicon NPN low power switching transistor of Type 3DK103

发布日期：1992-11-19  实施日期：1993-05-01

SJ 3126-1988

电子元器件详细规范 ３ＤＤ８６９型硅ＮＰＮ低频放大管壳额定双极型晶体管

Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD869 ...

实施日期：1988-12-01