Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials
适用范围:IEC 62047-14:2012 describes definitions and procedures for measuring the forming limit of metallic film materials with a thickness range from 0,5 μm to 300 μm. The metallic film materials described her...
发布日期:2012-02-28 实施日期:2012-02-28
Radiofrequency identification of animals -- Part 6: Representation of animal identification information (visual display/data transfer)
适用范围:ISO 24631-6:2011 specifies the representation of the animal identification information specified in ISO 11784 and ISO 11785 on a transceiver display and its communication from transceivers to systems i...
发布日期:2011-09-01 实施日期:2011-09-01
Semiconductor devices. Micro-electromechanical devices. Part 9: Wafer to wafer bonding strength measurement for MEMS (IEC 62047-9:2011); German version EN 62047-9:2011
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
适用范围:IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and a...
发布日期:2011-07-13 实施日期:2011-07-13
发布日期:2015-03-05 实施日期:2015-03-05
Semiconductor devices. Micro-electromechanical devices. Wafer to wafer bonding strength measurement for MEMS
发布日期:2013-01-31 实施日期:2013-01-31
发布日期:2015-03-27 实施日期:2015-03-27
发布日期:2015-05-20 实施日期:2015-05-20
发布日期:2016-05-25 实施日期:2016-05-25
发布日期:2016-08-29 实施日期:2016-08-29
Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials
适用范围:IEC 62047-10:2011 specifies micro-pillar compression test method to measure compressive properties of MEMS materials with high accuracy, repeatability, and moderate effort of specimen fabrication. The ...
发布日期:2011-07-26 实施日期:2011-07-26
发布日期:2014-06-19 实施日期:2014-06-19
发布日期:2015-07-01 实施日期:2015-07-01
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