Semiconductor devices. Micro-electromechanical devicesTest method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
发布日期:2013-10-31 实施日期:2013-10-31
发布日期:2014-06-19 实施日期:2014-06-19
发布日期:2015-07-01 实施日期:2015-07-01
发布日期:2015-03-27 实施日期:2015-03-27
发布日期:2016-08-29 实施日期:2016-08-29
发布日期:2015-05-20 实施日期:2015-05-20
Semiconductor devices. Micro-electromechanical devices. Part 10: Micro-pillar compression test for MEMS materials (IEC 62047-10:2011); German version EN 62047-10:2011
Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials
适用范围:IEC 62047-10:2011 specifies micro-pillar compression test method to measure compressive properties of MEMS materials with high accuracy, repeatability, and moderate effort of specimen fabrication. The ...
发布日期:2011-07-26 实施日期:2011-07-26
发布日期:2016-05-25 实施日期:2016-05-25
发布日期:2015-03-05 实施日期:2015-03-05
Semiconductor devices. Micro-electromechanical devices. Wafer to wafer bonding strength measurement for MEMS
发布日期:2013-01-31 实施日期:2013-01-31
发布日期:2014-12-01 实施日期:2014-12-01
发布日期:2015-03-05 实施日期:2015-03-05
Semiconductor devices. Micro-electromechanical devices. Part 9: Wafer to wafer bonding strength measurement for MEMS (IEC 62047-9:2011); German version EN 62047-9:2011
Integrated circuits. Measurement of electromagnetic emissions. Part 1-1:General conditions and definitions. Near-field scan data exchange format
适用范围:This part of IEC 61967 provides guidance for exchanging data generated by near-field scan measurements. The described exchange format could also be used for near-field scan data generated by simulation...
发布日期:2015-08-28 实施日期:2015-08-28
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