Semiconductor devices. Micro-electromechanical devicesTest method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
发布日期:2013-10-31 实施日期:2013-10-31
发布日期:2014-06-19 实施日期:2014-06-19
Semiconductor devices. Micro-electromechanical devices. Part 10: Micro-pillar compression test for MEMS materials (IEC 62047-10:2011); German version EN 62047-10:2011
Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials
适用范围:IEC 62047-10:2011 specifies micro-pillar compression test method to measure compressive properties of MEMS materials with high accuracy, repeatability, and moderate effort of specimen fabrication. The ...
发布日期:2011-07-26 实施日期:2011-07-26
发布日期:2015-03-05 实施日期:2015-03-05
Nanomanufacturing. Key control characteristics. Part 4-3:Nano-enabled electrical energy storage. Contact and coating resistivity measurements for nanomaterials
适用范围:This part of IEC 62607 provides a standardized test method for the measurement of contact and coating resistivity of nano-enabled electrode materials. This method will enable a customer to: a) decide w...
实施日期:2015-08-18
Measurement of thermal conductivity of thin films on silicon substrates
适用范围:TTA 4:2002 proposes a standard procedure for the three-omega method for measuring the thermal conductivity of a thin, electrically insulating film, on a substrate having a thermal conductivity signific...
发布日期:2002-11-01 实施日期:2002-11-01
发布日期:2013-06-27 实施日期:2013-06-27
Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials
适用范围:IEC 62047-14:2012 describes definitions and procedures for measuring the forming limit of metallic film materials with a thickness range from 0,5 μm to 300 μm. The metallic film materials described her...
发布日期:2012-02-28 实施日期:2012-02-28
Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials (IEC 62047-6:2009); German version EN 62047-6:2010
实施日期:2010-07-01
Semiconductor devices - Micro-electromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures
适用范围:IEC 62047-12:2011 specifies a method for bending fatigue testing using resonant vibration of microscale mechanical structures of MEMS (micro-electromechanical systems) and micromachines. This standard ...
发布日期:2011-09-13 实施日期:2011-09-13
Semiconductor devices. Micro-electromechanical devices. Part 8: Strip bending test method for tensile property measurement of thin films (IEC 62047-8:2011); German version EN 62047-8:2011
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